| PART |
Description |
Maker |
| FU-319SPA-C6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE
|
Mitsubishi Electric Sem...
|
| FU-319SPA-W6M20 319SPA-V6M20 319SPA-W6M20 319SPA-X |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE 铟镓砷APD的前置放大器模块，用.31微米.55 UM的波长范
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| G10519-14 |
InGaAs APD with preamp
|
Hamamatsu Corporation
|
| FRM5J141GT |
InGaAs-APD/Preamp Receiver
|
Eudyna Devices Inc
|
| G12072-54-15 |
InGaAs PIN photodiode with preamp
|
Hamamatsu Corporation
|
| FRM3Z121LT FRM3Z121KT |
InGaAs-PIN/Preamp Receiver
|
EUDYNA[Eudyna Devices Inc]
|
| ATV10GC-J28 ATV10GC ATV10GC-J57 |
10Gb/s surface mount coplanar APD preamp receiver with integrated MEMS VOA
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC[ETC]
|
| NR8360JP-BC |
30 um InGaAs APD IN DIP PACKAGE FOR OTDR APPLICATION
|
California Eastern Laboratories
|
| NR4510UR |
InGaAs APD ROSA with internal preamplifier for 2.5 Gb/s applications.
|
NEC
|
| G10518-51 G10518-54 |
InGaAs PIN photodiode with preamp 铟镓砷PIN光电二极管和前置放大
|
Hamamatsu Photonics K.K.
|
